Hall Coefficient in the doped Mott Insulator

Details Hall Coefficient in the doped Mott Insulator Hall Coefficient in the doped Mott Insulator

1995-12-22

arxiv.org/abs/cond-mat/9512151v1

Physics

Condensed Matter

4 pages Revtex, 1 uuencoded, gzipped file for 4 ps figures

Scientific paper

We compute the (zero frequency) Hall coefficient $R_H$, and the high frequency Hall constant $R_H^*$ for the strong coupling Hubbard model away from half-filling, in the $d=\infty$/ local approximation, using the new iterated perturbation scheme proposed by Kajueter and Kotliar. We find quantitative agreement of our $R_H^*$ with the QMC results obtained in two dimensions by Assaad and Imada [Phys. Rev. Lett. {\bf 74}, 3868 (1995)]. However while the {\it sign} of $R_H$ is quite accurately reproduced by $R_H^*$ the doping dependence of its magnitude at large U is not. We report results for the complete temperature $(T)$, doping $(x)$ and $U$ dependence of $R_H$ and $R_H^*$ and discuss their possible relevance to doped cuprates.

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