Two-Channel Kondo Effects in Al/AlO$_{x}$/Sc Planar Tunnel Junctions

Details Two-Channel Kondo Effects in Al/AlO$_{x}$/Sc Planar Tunnel Junctions Two-Channel Kondo Effects in Al/AlO$_{x}$/Sc Planar Tunnel Junctions

2009-01-08

arxiv.org/abs/0901.0954v1

Phys. Rev. B 79 (2009) 012411

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures. Phys. Rev. B (accepted)

Scientific paper

10.1103/PhysRevB.79.012411

We have measured the differential conductances $G(V,T)$ in several Al/AlO$_{x}$/Sc planar tunnel junctions between 2 and 35 K. As the temperature decreases to $\sim$ 16 K, the zero-bias conductance $G(0,T)$ crosses over from a standard $-$ln$T$ dependence to a novel $- \sqrt{T}$ dependence. Correspondingly, the finite bias conductance $G(V,T)$ reveals a two-channel Kondo scaling behavior between $\sim$ 4 and 16 K. The observed two-channel Kondo physics is ascribed to originating from a few localized spin-$\frac12$ Sc atoms situated slightly inside the AlO$_x$/Sc interface.

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