Pseudogap in Doped Mott Insulators is the Near-neighbour Analogue of the Mott Gap

Details Pseudogap in Doped Mott Insulators is the Near-neighbour Analogue of the Mott Gap Pseudogap in Doped Mott Insulators is the Near-neighbour Analogue of the Mott Gap

2002-09-05

arxiv.org/abs/cond-mat/0209118v3

Phys. Rev. Lett. 91, 017002 (2003)

Physics

Condensed Matter

Strongly Correlated Electrons

4.15 pages, with 4 .eps figures: this is the first reference in which the term Mottness is used

Scientific paper

10.1103/PhysRevLett.91.017002

We show that the strong coupling physics inherent to the insulating Mott state in 2D leads to a jump in the chemical potential upon doping and the emergence of a pseudogap in the single particle spectrum below a characteristic temperature. The pseudogap arises because any singly-occupied site not immediately neighbouring a hole experiences a maximum energy barrier for transport equal to $t^2/U$, where $t$ is the nearest-neighbour hopping integral and $U$ the on-site repulsion. The resultant pseudogap cannot vanish before each lattice site, on average, has at least one hole as a near neighbour. The ubiquituity of this effect in all doped Mott insulators suggests that the pseudogap in the cuprates has a simple origin.

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