Resonant Raman scattering by elementary electronic excitations in semiconductor structures

Details Resonant Raman scattering by elementary electronic excitations in semiconductor structures Resonant Raman scattering by elementary electronic excitations in semiconductor structures

1999-06-18

arxiv.org/abs/cond-mat/9906300v1

Phys. Rev. Lett. 83, 816 (1999).

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 5 figures included, to appear in Phys. Rev. Lett. on July 26

Scientific paper

10.1103/PhysRevLett.83.816

We explain quantitatively why resonant Raman scattering spectroscopy, an extensively used experimental tool in studying elementary electronic excitations in doped low dimensional semiconductor nanostructures, always produces an observable peak at the so-called "single particle" excitation although the standard theory predicts that there should be no such single particle peak in the Raman spectra. We have thus resolved an experimental puzzle which dates back more than twenty-five years.

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