Two-dimensional electrons at a cleaved semiconductor surface: Observation of the quantum Hall effect

Details Two-dimensional electrons at a cleaved semiconductor surface: Observation of the quantum Hall effect Two-dimensional electrons at a cleaved semiconductor surface: Observation of the quantum Hall effect

2005-07-06

arxiv.org/abs/cond-mat/0507135v2

Appl. Phys. Lett. 87, 062103 (2005)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 pages, 5 figures, to be published in Appl. Phys. Lett

Scientific paper

10.1063/1.2009811

Low-temperature in-plane magnetotransport measurements have been performed on adsorbate-induced electron systems formed at in-situ cleaved surfaces of p-type InAs. The Ag-coverage dependence of the surface electron density strongly supports a simple model based on a surface donor level lying above the conduction band minimum. The observations of the quantized Hall resistance and zero longitudinal resistivity demonstrate the perfect two-dimensionality of the surface electron system. We also observed the Rashba effect due to the strong asymmetry of the confining potential well.

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