Evolution of the density of states at EF of Bi2-yPbySr2-xLaxCuO6+d and Bi2Sr2-xLaxCuO6+d cuprates with hole doping

Details Evolution of the density of states at EF of Bi2-yPbySr2-xLaxCuO6+d and Bi2Sr2-xLaxCuO6+d cuprates with hole doping Evolution of the density of states at EF of Bi2-yPbySr2-xLaxCuO6+d and Bi2Sr2-xLaxCuO6+d cuprates with hole doping

2005-04-22

arxiv.org/abs/cond-mat/0504590v2

Phys. Rev. B 72, 014504 (2005) and Virtual J. of Appl. of Supercond. 9(2) 15 Jul. (2005)

Physics

Condensed Matter

Superconductivity

Scientific paper

10.1103/PhysRevB.72.014504

Bi2Sr2-xLaxCuO6+d and Bi2-yPbySr2-xLaxCuO6+d high-Tc superconductors in a wide doping range from overdoped to heavily underdoped were studied by X-ray absorption and photo-emission spectroscopy. The hole concentration p was determined by an analysis of the Cu L3-absorption edge. Besides the occupied density of states derived from photoemission, the un-occupied density of states was determined from the prepeak of the O K-absorption edge. Both, the occupied as well as the unoccupied density of states reveal the same dependence on hole doping, i.e. a continuous increase with increasing doping in the hole underdoped region and a constant density in the hole overdoped region. By comparing these results of single-layer BSLCO with previous results on single-layer LSCO it could be argued that besides the localized holes on Cu sites the CuO2-planes consist of two types of doped holes, from which the so-called mobile holes determine the intensity of the prepeak of the O 1s absorption edge.

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