Electronic Interface Reconstruction at Polar-Nonpolar Mott Insulator Heterojunctions

Details Electronic Interface Reconstruction at Polar-Nonpolar Mott Insulator Heterojunctions Electronic Interface Reconstruction at Polar-Nonpolar Mott Insulator Heterojunctions

2007-05-24

arxiv.org/abs/0705.3618v2

Phys. Rev. B 76, 075339 (2007)

Physics

Condensed Matter

Strongly Correlated Electrons

7 pages, 6 figures, some typos corrected

Scientific paper

10.1103/PhysRevB.76.075339

We report on a theoretical study of the electronic interface reconstruction (EIR) induced by polarity discontinuity at a heterojunction between a polar and a nonpolar Mott insulators, and of the two-dimensional strongly-correlated electron systems (2DSCESs) which accompany the reconstruction. We derive an expression for the minimum number of polar layers required to drive the EIR, and discuss key parameters of the heterojunction system which control 2DSCES properties. The role of strong correlations in enhancing confinement at the interface is emphasized.

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