Frequency doubling and memory effects in the Spin Hall Effect

Details Frequency doubling and memory effects in the Spin Hall Effect Frequency doubling and memory effects in the Spin Hall Effect

2008-12-23

arxiv.org/abs/0812.4325v1

Phys. Rev. B 79, 153307 (2009)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.79.153307

We predict that when an alternating voltage is applied to a semiconducting system with inhomogeneous electron density in the direction perpendicular to main current flow, the spin Hall effect results in a transverse voltage containing a double-frequency component. We also demonstrate that there is a phase shift between applied and transverse voltage oscillations, related to the general memristive behavior of semiconductor spintronic systems. A different method to achieve frequency doubling based on the inverse spin Hall effect is also discussed.

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