Directed self-organization of graphene nanoribbons on SiC

Details Directed self-organization of graphene nanoribbons on SiC Directed self-organization of graphene nanoribbons on SiC

2010-02-03

arxiv.org/abs/1002.0775v1

Nature Nanotechnology 5, 727 (2010)

Physics

Condensed Matter

Materials Science

13 pages, 5 figures

Scientific paper

Realization of post-CMOS graphene electronics requires production of semiconducting graphene, which has been a labor-intensive process. We present tailoring of silicon carbide crystals via conventional photolithography and microelectronics processing to enable templated graphene growth on 4H-SiC{1-10n} (n = 8) crystal facets rather than the customary {0001} planes. This allows self-organized growth of graphene nanoribbons with dimensions defined by those of the facet. Preferential growth is confirmed by Raman spectroscopy and high-resolution transmission electron microscopy (HRTEM) measurements, and electrical characterization of prototypic graphene devices is presented. Fabrication of > 10,000 top-gated graphene transistors on a 0.24 cm2 SiC chip demonstrates scalability of this process and represents the highest density of graphene devices reported to date.

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