Quantum Hall Resistance Overshoot in 2-Dimensional Electron Gases - Theory and Experiment

Details Quantum Hall Resistance Overshoot in 2-Dimensional Electron Gases - Theory and Experiment Quantum Hall Resistance Overshoot in 2-Dimensional Electron Gases - Theory and Experiment

2010-07-15

arxiv.org/abs/1007.2586v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

26 pages, 10 figures

Scientific paper

We present a systematical experimental investigation of an unusual transport phenomenon observed in two dimensional electron gases in Si/SiGe heterostructures under integer quantum Hall effect (IQHE) conditions. This phenomenon emerges under specific experimental conditions and in different material systems. It is commonly referred to as Hall resistance overshoot, however, lacks a consistent explanation so far. Based on our experimental findings we are able to develop a model that accounts for all of our observations in the framework of a screening theory for the IQHE. Within this model the origin of the overshoot is attributed to a transport regime where current is confined to co-existing evanescent incompressible strips of different filling factors.

Affiliated with

Also associated with

No associations

Rating

Quantum Hall Resistance Overshoot in 2-Dimensional Electron Gases - Theory and Experiment does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Quantum Hall Resistance Overshoot in 2-Dimensional Electron Gases - Theory and Experiment, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Quantum Hall Resistance Overshoot in 2-Dimensional Electron Gases - Theory and Experiment will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-599613