Strain-induced Fermi contour anisotropy of GaAs 2D holes

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

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Accepted for publication in Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.100.096803

We report measurements of magneto-resistance commensurability peaks, induced by a square array of anti-dots, in GaAs (311)A two-dimensional holes as a function of applied in-plane strain. The data directly probe the shapes of the Fermi contours of the two spin subbands that are split thanks to the spin-orbit interaction and strain. The experimental results are in quantitative agreement with the predictions of accurate energy band calculations, and reveal that the majority spin-subband has a severely distorted Fermi contour whose anisotropy can be tuned with strain.

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