Hot carriers in a bipolar graphene

Details Hot carriers in a bipolar graphene Hot carriers in a bipolar graphene

2010-05-22

arxiv.org/abs/1005.4157v1

J. Appl. Phys. 107, 124312 (2010); (5 pages)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Copyright (2010) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires p

Scientific paper

10.1063/1.3431353

Hot carriers in a doped graphene under dc electric field is described taking into account the intraband energy relaxation due to acoustic phonon scattering and the interband generation-recombination transitions caused by thermal radiation. The consideration is performed for the case when the intercarrier scattering effectively establishes the quasiequilibrium electron-hole distributions, with effective temperature and concentrations of carriers. The concentration and energy balance equations are solved taking into account an interplay between weak energy relaxation and generation-recombination processes. The nonlinear conductivity is calculated for the momentum relaxation caused by the elastic scattering. The current-voltage characteristics, and the transition between bipolar and monopolar regimes of conductivity are obtained and analyzed, for different temperatures and gate voltages.

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