Critical regime of two dimensional Ando model: relation between critical conductance and fractal dimension of electronic eigenstates

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

IOP Latex, 7 figures

Scientific paper

10.1088/0305-4470/39/13/003

The critical two-terminal conductance $g_c$ and the spatial fluctuations of critical eigenstates are investigated for a disordered two dimensional model of non-interacting electrons subject to spin-orbit scattering (Ando model). For square samples, we verify numerically the relation $\sigma_c=1/[2\pi(2-D(1))] e^2/h$ between critical conductivity $\sigma_c=g_c=(1.42\pm 0.005) e^2/h$ and the fractal information dimension of the electron wave function, $D(1)=1.889\pm 0.001$. Through a detailed numerical scaling analysis of the two-terminal conductance we also estimate the critical exponent $\nu=2.80\pm 0.04$ that governs the quantum phase transition.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Critical regime of two dimensional Ando model: relation between critical conductance and fractal dimension of electronic eigenstates does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Critical regime of two dimensional Ando model: relation between critical conductance and fractal dimension of electronic eigenstates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Critical regime of two dimensional Ando model: relation between critical conductance and fractal dimension of electronic eigenstates will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-588794

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.