Relaxation mechanism for electron spin in the impurity band of n-doped semiconductors

Details Relaxation mechanism for electron spin in the impurity band of n-doped semiconductors Relaxation mechanism for electron spin in the impurity band of n-doped semiconductors

2007-01-15

arxiv.org/abs/cond-mat/0701329v1

Phys. Rev. B 76, 085209 (2007)

Physics

Condensed Matter

Disordered Systems and Neural Networks

4 pages

Scientific paper

10.1103/PhysRevB.76.085209

We propose a mechanism to describe spin relaxation in n-doped III-V semiconductors close to the Mott metal-insulator transition. Taking into account the spin-orbit interaction induced spin admixture in the hydrogenic donor states, we build a tight-binding model for the spin-dependent impurity band. Since the hopping amplitudes with spin flip are considerably smaller than the spin conserving counterparts, the resulting spin lifetime is very large. We estimate the spin lifetime from the diffusive accumulation of spin rotations associated with the electron hopping. Our result is larger but of the same order of magnitude than the experimental value. Therefore the proposed mechanism has to be included when describing spin relaxation in the impurity band.

Affiliated with

Also associated with

No associations

Rating

Relaxation mechanism for electron spin in the impurity band of n-doped semiconductors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Relaxation mechanism for electron spin in the impurity band of n-doped semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Relaxation mechanism for electron spin in the impurity band of n-doped semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-584379