DOS-limited contact resistance in graphene FETs

Details DOS-limited contact resistance in graphene FETs DOS-limited contact resistance in graphene FETs

2011-04-11

arxiv.org/abs/1104.1818v1

Physics

Condensed Matter

Materials Science

Jpn J Appl Phys 2011

Scientific paper

Graphene has attracted much attention as one of promising candidates of future high-speed transistor materials because of its high carrier mobility of more than 10,000 cm2 V-1 s-1. Up to this point, we have focused on the contact properties as performance killers, as a very small density of states in graphene might suppress the current injection from metal to graphene. This paper systematically reviews the metal/graphene contact properties and discusses the present status and future requirements of the specific contact resistivity.

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