Origin of room-temperature ferromagnetism in Mn doped semiconducting CdGeP2

Details Origin of room-temperature ferromagnetism in Mn doped semiconducting CdGeP2 Origin of room-temperature ferromagnetism in Mn doped semiconducting CdGeP2

2001-11-29

arxiv.org/abs/cond-mat/0111570v1

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 4 figures. (To appear in Phys. Rev. Lett.)

Scientific paper

10.1103/PhysRevLett.88.047205

CdGeP2 chalcopyrites doped with Mn have been recently found to exhibit room temperature ferromagnetism. Isovalent substitution of the Cd site is expected, however, to create antiferromagnetism, in analogy with the well-known CdTe:Mn (d^5) case. However, chalcopyrite semiconductors exhibit low-energy intrinsic defects. We show theoretically how ferromagnetism results from the interaction of Mn with hole-producing intrinsic defects.

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