Positive Magneto-Resistance in Quasi-1D Conductors

Details Positive Magneto-Resistance in Quasi-1D Conductors Positive Magneto-Resistance in Quasi-1D Conductors

1997-07-16

arxiv.org/abs/cond-mat/9707169v1

Phys. Rev. B, v.56, 14883 (1997)

Physics

Condensed Matter

Disordered Systems and Neural Networks

4 pages, Latex, no figures

Scientific paper

10.1103/PhysRevB.56.14883

We present here a simple qualitative model that interpolates between the high and low temperature properties of quasi-1D conductors. At high temperatures we argue that transport is governed by inelastic scattering whereas at low temperatures the conductance decays exponentially with the electron dephasing length. The crossover between these regimes occurs at the temperature at which the elastic and inelastic scattering times become equal. This model is shown to be in quantitative agreement with the organic conductor $TTT_2I_{3-\delta}$. Within this model, we also show that on the insulating side, the positive magnetoresistance of the form $(H/T)^2$ observed in $TTT_2I_{3-\delta}$ and other quasi-1D conductors can be explained by the role spin-flip scattering plays in the electron dephasing rate.

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