Thin Lead Titanate films grown by Molecular Beam Epitaxy

Details Thin Lead Titanate films grown by Molecular Beam Epitaxy Thin Lead Titanate films grown by Molecular Beam Epitaxy

2007-04-20

arxiv.org/abs/0704.2691v1

Physics

Condensed Matter

Materials Science

Proceedings of the Rank-Prize symposium on Opto-electronics held in Grasmere (UK), September 2006. To appear in "Ferroelectric

Scientific paper

The growth of atomically-flat thin films of ferroelectric PbTiO3 on SrTiO3 substrates, using molecular beam epitaxy, is reported. The main issue in the growth of these materials is the high volatility of lead. This can be largely overcome by using PbO, instead of Pb, as a source and by using atomic oxygen during growth. The continuous decrease of the out-of-plane lattice parameter with increasing temperature in the investigated range, indicates that PbTiO3 is still ferroelectric at the growth temperature (Tg= 600oC), which agrees with the theoretical prediction of TC= 765oC (compared to TCbulk= 490oC) for the present mismatch strain values.

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