SPECTRAL CORRELATIONS IN DISORDERED ELECTRONIC SYSTEMS: CROSSOVER FROM METAL TO INSULATOR REGIME

Details SPECTRAL CORRELATIONS IN DISORDERED ELECTRONIC SYSTEMS: CROSSOVER FROM METAL TO INSULATOR REGIME SPECTRAL CORRELATIONS IN DISORDERED ELECTRONIC SYSTEMS: CROSSOVER FROM METAL TO INSULATOR REGIME

1995-01-17

arxiv.org/abs/cond-mat/9501072v1

Phys. Rev. Lett. 74 (1995) 1174

Physics

Condensed Matter

4 pages,1 figure, in self-ectracting uuencoded gz-compressed file to be published in Phys. Rev. Letters; REVTeX source file is

Scientific paper

10.1103/PhysRevLett.74.1174

We use the semiclassical approach combined with the scaling results for the diffusion coefficient to consider the two-level correlation function $R(\varepsilon)$ for a disordered electron system in the crossover region, characterized by the appearance of a macroscopic correlation or localization length, $\xi$, that diverges at the metal-insulator transition. We show new critical statistics, characterized by a nontrivial asymptotic behavior of $R(\varepsilon)$, to emerge on both sides of the transition at higher energies, and to expand to all energies larger than mean level spacing when $\xi$ exceeds the system size.

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