Anderson transition and thermal effects on electron states in amorphous silicon

Details Anderson transition and thermal effects on electron states in amorphous silicon Anderson transition and thermal effects on electron states in amorphous silicon

1999-09-30

arxiv.org/abs/cond-mat/9909455v1

Physics

Condensed Matter

Disordered Systems and Neural Networks

Was presented at ICAMS18, Snowbird UT, August 1999. Submitted to J. of Non-Cryst. Solids

Scientific paper

10.1016/S0022-3093(99)00823-6

I discuss the properties of electron states in amorphous Si based on large scale calculations with realistic several thousand atom models. A relatively simple model for the localized to extended (Anderson) transition is reviewed. Then, the effect of thermal disorder on localized electron states is considered. It is found that under readily accessible conditions, localized (midgap or band tail) states and their conjugate energies may fluctuate dramatically. The possible importance of non-adiabatic atomic dynamics to doped or photo-excited systems is briefly discussed.

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