Strong Pinning Enhancement in MgB2 Using Very Small Dy2O3 Additions

Details Strong Pinning Enhancement in MgB2 Using Very Small Dy2O3 Additions Strong Pinning Enhancement in MgB2 Using Very Small Dy2O3 Additions

2006-02-09

arxiv.org/abs/cond-mat/0602234v1

Physics

Condensed Matter

Superconductivity

13 pages, 4 figures and 1 table

Scientific paper

10.1063/1.2203209

0.5 to 5.0 wt.% Dy2O3 was in-situ reacted with Mg + B to form pinned MgB2. While Tc remained largely unchanged, Jc was strongly enhanced. The best sample (only 0.5 wt.% Dy2O3) had a Jc of 6.5 x 10^5 A/cm^2 at 6K, 1T and 3.5 x 10^5 A/cm^2 at 20K, 1T, around a factor of 4 higher compared to the pure sample, and equivalent to hot-pressed or nano-Si added MgB2 at below 1T. Even distributions of nano-scale precipitates of DyB4 and MgO were observed within the grains. The room temperature resistivity decreased with Dy2O3 indicative of improved grain connectivity.

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