Quantum control of donor electrons at the Si-SiO2 interface

Details Quantum control of donor electrons at the Si-SiO2 interface Quantum control of donor electrons at the Si-SiO2 interface

2005-08-26

arxiv.org/abs/cond-mat/0508647v2

Phys. Rev. Lett. 96, 096802 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Version accepted for publication in PRL

Scientific paper

10.1103/PhysRevLett.96.096802

Prospects for the quantum control of electrons in the silicon quantum computer architecture are considered theoretically. In particular, we investigate the feasibility of shuttling donor-bound electrons between the impurity in the bulk and the Si-SiO2 interface by tuning an external electric field. We calculate the shuttling time to range from sub-picoseconds to nanoseconds depending on the distance (~ 10-50 nm) of the donor from the interface. Our results establish that quantum control in such nanostructure architectures could, in principle, be achieved.

Affiliated with

Also associated with

No associations

Rating

Quantum control of donor electrons at the Si-SiO2 interface does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Quantum control of donor electrons at the Si-SiO2 interface, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Quantum control of donor electrons at the Si-SiO2 interface will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-567959