Ferromagnetism in III-V and II-VI semiconductor structures

Physics – Condensed Matter – Materials Science

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Proc. 11th International Winterschool on Low Dimensional Systems: Fundamentals and Applications Mauterndorf, Austria, 2000, Ph

Scientific paper

10.1016/S1386-9477(00)00193-4

The current status of research on the carrier-mediated ferromagnetism in tetrahedrally coordinated semiconductors is briefly reviewed. The experimental results for III-V semiconductors, where Mn atoms introduce both spins and holes, are compared to the case of II-VI compounds, in which the ferromagnetism has been observed for the modulation-doped p-type Cd1-xMnxTe/Cd1-y-zMgyZnzTe:N heterostructures, and more recently, in Zn1-xMnxTe:N epilayers. On the theoretical side, a model is presented, which takes into account: (i) strong spin-orbit and kp couplings in the valence band; (ii) the effect of confinement and strain upon the hole density-of-states and response function, and (iii) the influence of disorder and carrier-carrier interactions, particularly near the metal-to-insulator transition. A comparison between experimental and theoretical results demonstrates that the model can describe the magnetic circular dichroism, the values of TC observed in the studied systems as well as explain the directions of the easy axis and the magnitudes of the corresponding anisotropy fields as a function of confinement and biaxial strain. Various suggestions concerning design of novel ferromagnetic semiconductor systems are described.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Ferromagnetism in III-V and II-VI semiconductor structures does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Ferromagnetism in III-V and II-VI semiconductor structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ferromagnetism in III-V and II-VI semiconductor structures will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-565526

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.