Theoretical Study of Corundum as an Ideal Gate Dielectric Material for Graphene Transistors

Details Theoretical Study of Corundum as an Ideal Gate Dielectric Material for Graphene Transistors Theoretical Study of Corundum as an Ideal Gate Dielectric Material for Graphene Transistors

2011-10-21

arxiv.org/abs/1110.4923v1

Physical Review B 84, 155406 (2011)

Physics

Condensed Matter

Materials Science

Scientific paper

Using physical insights and advanced first-principles calculations, we suggest that corundum is an ideal gate dielectric material for graphene transistors. Clean interface exists between graphene and Al-terminated (or hydroxylated) Al2O3 and the valence band offsets for these systems are large enough to create injection barrier. Remarkably, a band gap of {\guillemotright} 180 meV can be induced in graphene layer adsorbed on Al-terminated surface, which could realize large ON/OFF ratio and high carrier mobility in graphene transistors without additional band gap engineering and significant reduction of transport properties. Moreover, the band gaps of graphene/Al2O3 system could be tuned by an external electric field for practical applications.

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