Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2

Details Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2 Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2

2007-11-23

arxiv.org/abs/0711.3646v2

Nature Nanotechnology 3, 206 - 209 (2008)

Physics

Condensed Matter

Materials Science

16 pages, 3 figures

Scientific paper

10.1038/nnano.2008.58

The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is independent of carrier density n. Here we show that acoustic phonon scattering[4-6] is indeed independent of n, and places an intrinsic limit on the resistivity in graphene of only 30 Ohm at room temperature (RT). At a technologically-relevant carrier density of 10^12 cm^-2, the mean free path for electron-acoustic phonon scattering is >2 microns, and the intrinsic mobility limit is 2x10^5 cm^2/Vs, exceeding the highest known inorganic semiconductor (InSb, ~7.7x10^4 cm^2/Vs[9]) and semiconducting carbon nanotubes (~1x10^5 cm^2/Vs[10]). We also show that extrinsic scattering by surface phonons of the SiO2 substrate[11,12] adds a strong temperature dependent resistivity above ~200 K[8], limiting the RT mobility to ~4x10^4 cm^2/Vs, pointing out the importance of substrate choice for graphene devices[13].

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