Inversion of magnetoresistance in magnetic tunnel junctions : effect of pinhole nanocontacts

Details Inversion of magnetoresistance in magnetic tunnel junctions : effect of pinhole nanocontacts Inversion of magnetoresistance in magnetic tunnel junctions : effect of pinhole nanocontacts

2005-07-29

arxiv.org/abs/cond-mat/0507727v3

Phys. Rev. Lett. 96, 026601 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Replaced with revised version and new figure, 6 figures, RevTex4

Scientific paper

10.1103/PhysRevLett.96.026601

Inverse magnetoresistance has been observed in magnetic tunnel junctions with pinhole nanocontacts over a broad temperature range. The tunnel magnetoresistance undergoes a change of sign at higher bias and temperature. This phenomenon is attributed to the competition between the spin conserved ballistic transport through the pinhole contact where the transmission probability is close to unity and spin polarized tunneling across the insulating spacer with weak transmittivity.

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