Weak localization in GaMnAs: evidence of impurity band transport

Details Weak localization in GaMnAs: evidence of impurity band transport Weak localization in GaMnAs: evidence of impurity band transport

2007-07-17

arxiv.org/abs/0707.2416v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figure

Scientific paper

10.1103/PhysRevB.76.161201

We report the observation of negative magnetoresistance in the ferromagnetic semiconductor GaMnAs at low temperatures ($T<3$ K) and low magnetic fields ($0< B <20$ mT). We attribute this effect to weak localization. Observation of weak localization provides a strong evidence of impurity band transport in these materials, since for valence band transport one expects either weak anti-localization due to strong spin-orbit interactions or total suppression of interference by intrinsic magnetization. In addition to the weak localization, we observe Altshuler-Aronov electron-electron interactions effect in this material.

Affiliated with

Also associated with

No associations

Rating

Weak localization in GaMnAs: evidence of impurity band transport does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Weak localization in GaMnAs: evidence of impurity band transport, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Weak localization in GaMnAs: evidence of impurity band transport will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-562223