Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices

Details Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices

2002-10-05

arxiv.org/abs/cond-mat/0210118v2

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

3 figures

Scientific paper

10.1103/PhysRevLett.90.107201

Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is four orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.

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