Comment on ``Spin Dependent Hopping and Colossal Negative Magnetoresistance in Epitaxial $Nd_{0.52}Sr_{0.48}MnO_{3}$ Films in Fields up to 50 T''

Details Comment on ``Spin Dependent Hopping and Colossal Negative Magnetoresistance in Epitaxial $Nd_{0.52}Sr_{0.48}MnO_{3}$ Films in Fields up to 50 T'' Comment on ``Spin Dependent Hopping and Colossal Negative Magnetoresistance in Epitaxial $Nd_{0.52}Sr_{0.48}MnO_{3}$ Films in Fields up to 50 T''

1999-06-02

arxiv.org/abs/cond-mat/9906026v1

Physics

Condensed Matter

Strongly Correlated Electrons

1 page

Scientific paper

10.1103/PhysRevLett.84.4017

Recently Wagner et al. [Phys. Rev. Lett. Vol. 81, P. 3980 (1998)] proposed that Mott's original model be modified to incorporate a hopping barrier which depends on the misorientation between the spins of electrons at the initial and the final states in an elementary process. They further claimed that using the model they can explain the observed scaling behavior-- negative-magnetoresistivity scaling proportional to the Brillouin function $\cal{B}$ in the ferromagnetic state and to ${\cal{B}}^2$ in the paramagnetic state. In this comment we argue that the modification needed for Mott's original model is different from that proposed by Wagner et al. and further show that our picture will successfully explain the observed scaling in the two regimes.

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