Local pressure-induced metallization of a semiconducting carbon nanotube in a crossed junction

Details Local pressure-induced metallization of a semiconducting carbon nanotube in a crossed junction Local pressure-induced metallization of a semiconducting carbon nanotube in a crossed junction

2005-05-23

arxiv.org/abs/cond-mat/0505531v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1103/PhysRevLett.96.086804

The electronic and vibrational density of states of a semiconducting carbon nanotube in a crossed junction was investigated by elastic and inelastic scanning tunneling spectroscopy. The strong radial compression of the nanotube at the junction induces local metallization spatially confined to a few nm. The local electronic modifications are correlated with the observed changes in the radial breathing and G-band phonon modes, which react very sensitively to local mechanical deformation. In addition, the experiments reveal the crucial contribution of the image charges to the contact potential at nanotube-metal interfaces.

Affiliated with

Also associated with

No associations

Rating

Local pressure-induced metallization of a semiconducting carbon nanotube in a crossed junction does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Local pressure-induced metallization of a semiconducting carbon nanotube in a crossed junction, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Local pressure-induced metallization of a semiconducting carbon nanotube in a crossed junction will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-559406