Superconducting gap structure and pinning in disordered MgB2 films

Details Superconducting gap structure and pinning in disordered MgB2 films Superconducting gap structure and pinning in disordered MgB2 films

2003-09-25

arxiv.org/abs/cond-mat/0309589v1

Physics

Condensed Matter

Superconductivity

Paper presented at EUCAS'03

Scientific paper

10.1088/0953-2048/17/5/052

We have performed a comparative study of two thin films of magnesium diboride (MgB2) grown by different techniques. The critical current density at different temperatures and magnetic fields was evaluated from magnetisation curves, the structure of superconducting order parameter was obtained from point-contact spectroscopy, and the scattering rates were evaluated by fitting the temperature dependent normal-state resistivity to the two-band model. The films have similar critical temperatures close to 39 K, but the upper critical fields were different by a factor of 2 (5.2T and 2.5 T at 20 K). We have found that the film with higher Hc2 also had stronger scattering in the sigma band and smaller value of the superconducting gap in this band. As the scattering in sigma band is primarily due to the defects in boron plane, our results are consistent with the assumption that disordering the boron planes leads to enhanced Hc2 and better pinning properties in magnetic field.

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