The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition

Details The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition

2012-02-15

arxiv.org/abs/1202.3391v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

submitted to Appl. Phys. Lett

Scientific paper

We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition (ALD). We demonstrate the feasibility of direct ALD growth with trimethylaluminum(TMA) and water as precursors on both 2D crystals. Through theoretical and experimental studies, we found that the initial ALD cycles play the critical role, during which physical adsorption dominates precursor adsorption at the semiconductor surface. We model the initial ALD growth stages at the 2D surface by analyzing Lennard-Jones Potentials, which could guide future optimization of the ALD process on 2D crystals.

Affiliated with

Also associated with

No associations

Rating

The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-558245