Physics – Condensed Matter – Materials Science
Scientific paper
2005-10-26
Phys. Rev. B 73, 035205 (2006)
Physics
Condensed Matter
Materials Science
15 pages, 7 figures, submitted to Phys. Rev. B
Scientific paper
10.1103/PhysRevB.73.035205
We present a systematic study of the exciton/electron-hole plasma photoluminescence dynamics in bulk GaAs for various lattice temperatures and excitation densities. The competition between the exciton and electron-hole pair recombination dominates the onset of the luminescence. We show that the metal-to-insulator transition, induced by temperature and/or excitation density, can be directly monitored by the carrier dynamics and the time-resolved spectral characteristics of the light emission. The dependence on carrier density of the photoluminescence rise time is strongly modified around a lattice temperature of 49 K, corresponding to the exciton binding energy (4.2 meV). In a similar way, the rise-time dependence on lattice temperature undergoes a relatively abrupt change at an excitation density of 120-180x10^15 cm^-3, which is about five times greater than the calculated Mott density in GaAs taking into account many body corrections.
Amo Alberto
Martin Daniel M.
Toropov Aleksandr I.
Vina L.
Zhuravlev K. S.
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