Localization and Dephasing Driven by Magnetic Fluctuations in Low Carrier Density Colossal Magnetoresistance Materials

Details Localization and Dephasing Driven by Magnetic Fluctuations in Low Carrier Density Colossal Magnetoresistance Materials Localization and Dephasing Driven by Magnetic Fluctuations in Low Carrier Density Colossal Magnetoresistance Materials

1998-08-06

arxiv.org/abs/cond-mat/9808065v7

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 1 eps figure, LaTex2e, EPJ macro package (style files included); final version, submitted to EPJ B

Scientific paper

10.1007/s100510050779

Localization and dephasing of conduction electrons in a low carrier density ferromagnet due to scattering on magnetic fluctuations is considered. We claim the existence of the "mobility edge", which separates the states with fast diffusion and the states with slow diffusion; the latter is determined by the dephasing time. When the "mobility edge" crosses the Fermi energy a large and sharp change of conductivity is observed. The theory provides an explanation for the observed temperature dependence of conductivity in ferromagnetic semiconductors and manganite pyrochlores.

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