Impurity pinning in transport through 1D Mott-Hubbard and spin gap insulators

Details Impurity pinning in transport through 1D Mott-Hubbard and spin gap insulators Impurity pinning in transport through 1D Mott-Hubbard and spin gap insulators

1999-09-29

arxiv.org/abs/cond-mat/9909410v1

Physics

Condensed Matter

5 twocolumn pages in RevTex, no figures

Scientific paper

10.1016/S0038-1098(99)00573-6

A low energy crossover (see cond-mat/9711167) induced by Fermi liquid reservoirs in transport through a 1D Mott-Hubbard insulator of finite length $L$ is examined in the presence of impurity pinning. Under the assumption that the Hubbard gap 2M is large enough: $M > T_L \equiv v_c/L$ ($v_c$: charge velocity in the wire) and the impurity backscattering rate $\Gamma_1 \ll T_L$, the conductance vs. voltage/temperature displays a zero-energy resonance. Transport through a spin gapped 1D system is also described availing of duality between the backscattered current of this system and the direct current of the Mott-Hubbard insulator.

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