Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

Details Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

2006-11-15

arxiv.org/abs/cond-mat/0611399v1

Science, 314, 1757 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

22 pages. Submitted to Science for publication on Aug 14, 2006

Scientific paper

10.1126/science.1133734

We show that the Quantum Spin Hall Effect, a state of matter with topological properties distinct from conventional insulators, can be realized in HgTe/CdTe semiconductor quantum wells. By varying the thickness of the quantum well, the electronic state changes from a normal to an "inverted" type at a critical thickness $d_c$. We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss the methods for experimental detection of the QSH effect.

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