Spin-Polarized Electron Transport at Ferromagnet/Semiconductor Schottky Contacts

Details Spin-Polarized Electron Transport at Ferromagnet/Semiconductor Schottky Contacts Spin-Polarized Electron Transport at Ferromagnet/Semiconductor Schottky Contacts

2003-02-24

arxiv.org/abs/cond-mat/0302457v1

Physical Review B 68, 035340 (2003)

Physics

Condensed Matter

RevTex4

Scientific paper

10.1103/PhysRevB.68.035340

We theoretically investigate electron spin injection and spin-polarization sensitive current detection at Schottky contacts between a ferromagnetic metal and an n-type or p-type semiconductor. We use spin-dependent continuity equations and transport equations at the drift-diffusion level of approximation. Spin-polarized electron current and density in the semiconductor are described for four scenarios corresponding to the injection or the collection of spin polarized electrons at Schottky contacts to n-type or p-type semiconductors. The transport properties of the interface are described by a spin-dependent interface resistance, resulting from an interfacial tunneling region. The spin-dependent interface resistance is crucial for achieving spin injection or spin polarization sensitivity in these configurations. We find that the depletion region resulting from Schottky barrier formation at a metal/semiconductor interface is detrimental to both spin injection and spin detection. However, the depletion region can be tailored using a doping density profile to minimize these deleterious effects. For example, a heavily doped region near the interface, such as a delta-doped layer, can be used to form a sharp potential profile through which electrons tunnel to reduce the effective Schottky energy barrier that determines the magnitude of the depletion region. The model results indicate that efficient spin-injection and spin-polarization detection can be achieved in properly designed structures and can serve as a guide for the structure design.

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