Mechanism for bipolar resistive switching in transition metal oxides

Details Mechanism for bipolar resistive switching in transition metal oxides Mechanism for bipolar resistive switching in transition metal oxides

2010-01-05

arxiv.org/abs/1001.0703v1

Physics

Condensed Matter

Materials Science

Accepted for publication in Physical Review B, 6 twocolumn pages, 5 figures

Scientific paper

We introduce a model that accounts for the bipolar resistive switching phenomenom observed in transition metal oxides. It qualitatively describes the electric field-enhanced migration of oxygen vacancies at the nano-scale. The numerical study of the model predicts that strong electric fields develop in the highly resistive dielectric-electrode interfaces, leading to a spatially inhomogeneous oxygen vacancies distribution and a concomitant resistive switching effect. The theoretical results qualitatively reproduce non-trivial resistance hysteresis experiments that we also report, providing key validation to our model.

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