Magnetic-field dependence of electron spin relaxation in n-type semiconductors

Details Magnetic-field dependence of electron spin relaxation in n-type semiconductors Magnetic-field dependence of electron spin relaxation in n-type semiconductors

2002-08-07

arxiv.org/abs/cond-mat/0208139v2

Phys. Rev. B 66, 233206 (2002)

Physics

Condensed Matter

Materials Science

accepted for publication in PRB, minor changes to previous manuscript

Scientific paper

10.1103/PhysRevB.66.233206

We present a theoretical investigation of the magnetic field dependence of the longitudinal ($T_1$) and transverse ($T_2$) spin relaxation times of conduction band electrons in n-type III-V semiconductors. In particular, we find that the interplay between the Dyakonov-Perel process and an additional spin relaxation channel, which originates from the electron wave vector dependence of the electron $g$-factor, yields a maximal $T_2$ at a finite magnetic field. We compare our results with existing experimental data on n-type GaAs and make specific additional predictions for the magnetic field dependence of electron spin lifetimes.

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