Vibrational Sidebands and Kondo-effect in Molecular Transistors

Details Vibrational Sidebands and Kondo-effect in Molecular Transistors Vibrational Sidebands and Kondo-effect in Molecular Transistors

2004-09-07

arxiv.org/abs/cond-mat/0409158v1

Phys. Rev. Lett. 94, 176801 (2005)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages

Scientific paper

10.1103/PhysRevLett.94.176801

Electron transport through molecular quantum dots coupled to a single vibrational mode is studied in the Kondo regime. We apply a generalized Schrieffer-Wolff transformation to determine the effective low-energy spin-spin-vibron-interaction. From this model we calculate the nonlinear conductance and find Kondo sidebands located at bias-voltages equal to multiples of the vibron frequency. Due to selection rules, the side-peaks are found to have strong gate-voltage dependences, which can be tested experimentally. In the limit of weak electron-vibron coupling, we employ a perturbative renormalization group scheme to calculate analytically the nonlinear conductance.

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