Transport properties of quantum dots with hard walls

Details Transport properties of quantum dots with hard walls Transport properties of quantum dots with hard walls

2000-09-22

arxiv.org/abs/cond-mat/0009344v1

Phys. Rev. B 63, 125309 (2001)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

9 pages, 5 figures

Scientific paper

10.1103/PhysRevB.63.125309

Quantum dots are fabricated in a Ga[Al]As-heterostructure by local oxidation with an atomic force microscope. This technique, in combination with top gate voltages, allows us to generate steep walls at the confining edges and small lateral depletion lengths. The confinement is characterized by low-temperature magnetotransport measurements, from which the dots' energy spectrum is reconstructed. We find that in small dots, the addition spectrum can qualitatively be described within a Fock-Darwin model. For a quantitative analysis, however, a hard-wall confinement has to be considered. In large dots, the energy level spectrum deviates even qualitatively from a Fock-Darwin model. The maximum wall steepness achieved is of the order of 0.4 meV/nm.

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