Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions

Details Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions Tunneling magnetoresistance in diluted magnetic semiconductor tunnel junctions

2001-01-15

arxiv.org/abs/cond-mat/0101206v1

Phys. Rev. B 64, 035201 (2001).

Physics

Condensed Matter

Strongly Correlated Electrons

5 pages (RevTex), 3 figures (eps), submitted to PRB

Scientific paper

10.1103/PhysRevB.64.035201

Using the spin-polarized tunneling model and taking into account the basic physics of ferromagnetic semiconductors, we study the temperature dependence of the tunneling magnetoresistance (TMR) in the diluted magnetic semiconductor (DMS) trilayer heterostructure system (Ga,Mn)As/AlAs/(Ga,Mn)As. The experimentally observed TMR ratio is in reasonable agreement with our result based on the typical material parameters. It is also shown that the TMR ratio has a strong dependence on both the itinerant-carrier density and the magnetic ion density in the DMS electrodes. This can provide a potential way to achieve larger TMR ratio by optimally adjusting the material parameters.

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