Focusing of Spin Polarization in Semiconductors by Inhomogeneous Doping

Details Focusing of Spin Polarization in Semiconductors by Inhomogeneous Doping Focusing of Spin Polarization in Semiconductors by Inhomogeneous Doping

2003-02-25

arxiv.org/abs/cond-mat/0302523v1

Phys. Rev. Lett. 90, 256602 (2003)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevLett.90.256602

We study the evolution and distribution of non-equilibrium electron spin polarization in n-type semiconductors within the two-component drift-diffusion model in an applied electric field. Propagation of spin-polarized electrons through a boundary between two semiconductor regions with different doping levels is considered. We assume that inhomogeneous spin polarization is created locally and driven through the boundary by the electric field. The electric field distribution and spin polarization distribution are calculated numerically. We show that an initially created narrow region of spin polarization can be further compressed and amplified near the boundary. Since the boundary involves variation of doping but no real interface between two semiconductor materials, no significant spin-polarization loss is expected. The proposed mechanism will be therefore useful in designing new spintronic devices.

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