Electron-electron scattering effect on spin relaxation in multi-valley nanostructures

Details Electron-electron scattering effect on spin relaxation in multi-valley nanostructures Electron-electron scattering effect on spin relaxation in multi-valley nanostructures

2009-05-27

arxiv.org/abs/0905.4393v2

EPL, 87 (2009) 57005

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

6 pages, 4 figures, EPL style, revised version

Scientific paper

10.1209/0295-5075/87/57005

We develop a theory of effects of electron-electron collisions on the Dyakonov-Perel' spin relaxation in multi-valley quantum wells. It is shown that the electron-electron scattering rate which governs the spin relaxation is different from that in a single-valley system. The theory is applied to Si/SiGe (001)-grown quantum wells where two valleys are simultaneously populated by free carriers. The dependences of the spin relaxation rate on temperature, electron concentration and valley-orbit splitting are calculated and discussed. We demonstrate that in a wide range of temperatures the electron-electron collisions can govern spin relaxation in high-quality Si/SiGe quantum wells.

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