External Bias Dependent Direct To Indirect Bandgap Transition in Graphene Nanoribbon

Details External Bias Dependent Direct To Indirect Bandgap Transition in Graphene Nanoribbon External Bias Dependent Direct To Indirect Bandgap Transition in Graphene Nanoribbon

2010-06-26

arxiv.org/abs/1006.5119v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Accepted for publication in Nano Letters

Scientific paper

In this work, using self-consistent tight-binding calculations, for the first time, we show that a direct to indirect bandgap transition is possible in an armchair graphene nanoribbon by the application of an external bias along the width of the ribbon, opening up the possibility of new device applications. With the help of Dirac equation, we qualitatively explain this bandgap transition using the asymmetry in the spatial distribution of the perturbation potential produced inside the nanoribbon by the external bias. This is followed by the verification of the bandgap trends with a numerical technique using Magnus expansion of matrix exponentials. Finally, we show that the carrier effective masses possess tunable sharp characters in the vicinity of the bandgap transition points.

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