Theory of excitonic spectra and entanglement engineering in dot molecules

Details Theory of excitonic spectra and entanglement engineering in dot molecules Theory of excitonic spectra and entanglement engineering in dot molecules

2004-06-29

arxiv.org/abs/cond-mat/0406725v1

Phys. Rev. Lett. 93, 047401 (2004)

Physics

Condensed Matter

Materials Science

To be published in PRL

Scientific paper

10.1103/PhysRevLett.93.047401

We present results of correlated pseudopotential calculations of an exciton in a pair of vertically stacked InGaAs/GaAs dots. Competing effects of strain, geometry, and band mixing lead to many unexpected features missing in contemporary models. The first four excitonic states are all optically active at small interdot separation, due to the broken symmetry of the single-particle states. We quantify the degree of entanglement of the exciton wavefunctions and show its sensitivity to interdot separation. We suggest ways to spectroscopically identify and maximize the entanglement of exciton states.

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