Microscopic Model for Sequential Tunneling in Semiconductor Multiple Quantum Wells

Details Microscopic Model for Sequential Tunneling in Semiconductor Multiple Quantum Wells Microscopic Model for Sequential Tunneling in Semiconductor Multiple Quantum Wells

1997-03-13

arxiv.org/abs/cond-mat/9703131v1

Physics

Condensed Matter

4 pages, 8 Postscript Figures

Scientific paper

10.1103/PhysRevB.55.R16053

We propose a selfconsistent microscopic model of vertical sequential tunneling through a multi-quantum well.The model includes a detailed description of the contacts,uses the Transfer Hamiltonian for expressions of the current and it treats the Coulomb interaction within a mean field approximation. We analyze the current density through a double well and a superlattice and study the formation of electric field domains and multistability coming from the Coulomb interaction. Phase diagrams of parameter regions (bias, doping in the heterostructure and in the contacts,etc) where the different solutions exist are given.

Affiliated with

Also associated with

No associations

Rating

Microscopic Model for Sequential Tunneling in Semiconductor Multiple Quantum Wells does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Microscopic Model for Sequential Tunneling in Semiconductor Multiple Quantum Wells, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Microscopic Model for Sequential Tunneling in Semiconductor Multiple Quantum Wells will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-525494