Criticality of Vacancy-Induced Metal-Insulator Transition in Graphene

Details Criticality of Vacancy-Induced Metal-Insulator Transition in Graphene Criticality of Vacancy-Induced Metal-Insulator Transition in Graphene

2010-01-13

arxiv.org/abs/1001.2057v1

Physics

Condensed Matter

Materials Science

4 pages,4 figures

Scientific paper

The criticality of vacancy-induced metal-insulator transition (MIT) in graphene is investigated by Kubo-Greenwood formula with tight-binding recursion method. The critical vacancy concentration for the MIT is determined to be 0.053%. The scaling laws for transport properties near the critical point are examined showing several unconventional 2D localization behaviors. Our theoretical results have shed some new lights to the understanding of recent experiments in H-dosed graphene and of 2D disordered systems in general.

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