Logarithmic Temperature Dependence of the Conductivity and Lack of Universal One-Parameter Scaling in the Two-Dimensional Metal

Details Logarithmic Temperature Dependence of the Conductivity and Lack of Universal One-Parameter Scaling in the Two-Dimensional Metal Logarithmic Temperature Dependence of the Conductivity and Lack of Universal One-Parameter Scaling in the Two-Dimensional Metal

1998-01-09

arxiv.org/abs/cond-mat/9801077v2

JETP Lett. v68(6), 534 (1998); JETP Lett. v68(5), 442 (1998)

Physics

Condensed Matter

Strongly Correlated Electrons

5 pages, RevTeX, 3 ps figures, modified version

Scientific paper

10.1134/1.567887

We show that the two-dimensional metallic state in Si-MOS samples persists over a wide range of temperatures (16 mK to 8 K), sample peak mobilities (varying by a factor of 8), carrier densities (0.8 to $35\times 10^{11}$ cm$^{-2}$) and conductances from 0.3 to $120 e^2/h$. Our data reveal a failure of the universal one-parameter scaling. We have found a weak delocalizing logarithmic correction to the conductivity, which governs a weak increase in the conductivity of the 2D metal as $T$ approaches zero.

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