Physics – Condensed Matter – Materials Science
Scientific paper
2007-08-23
Phys. Rev. B 77, 125323 (2008).
Physics
Condensed Matter
Materials Science
6 pages, 4 figures, to be published in PRB
Scientific paper
10.1103/PhysRevB.77.125323
We propose a scheme to manipulate the spin coherence in vertically coupled GaAs double quantum dots. Up to {\em ten} orders of magnitude variation of the spin relaxation and {\em two} orders of magnitude variation of the spin dephasing can be achieved by a small gate voltage applied vertically on the double dot. Specially, large variation of spin relaxation still exists at 0 K. In the calculation, the equation-of-motion approach is applied to obtain the electron decoherence time and all the relevant spin decoherence mechanisms, such as the spin-orbit coupling together with the electron--bulk-phonon scattering, the direct spin-phonon coupling due to the phonon-induced strain, the hyperfine interaction and the second-order process of electron-phonon scattering combined with the hyperfine interaction, are included. The condition to obtain the large variations of spin coherence is also addressed.
Wang Yadong
Wu M. W.
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